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| HAT1033T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-532 E (Z) 6th. Edition July 1997 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline HAT1033T Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings -20 10 -3.5 -28 -3.5 1.3 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 10s, duty cycle 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 2 HAT1033T Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS IGSS IDSS Min -20 10 -- -- -0.4 -- -- 5.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.046 0.061 8.0 970 510 150 16 100 245 190 -0.81 65 Max -- -- 10 -1 -1.4 0.063 0.090 -- -- -- -- -- -- -- -- -1.06 -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = -3.5A, VGS = 0* IF = -3.5A, VGS = 0 diF/ dt =20A/s 1 Test Conditions ID = -10mA, VGS = 0 IG = 100A, VDS = 0 VGS = 8V, VDS = 0 VDS = -20 V, VGS = 0 VDS = -10V, I D = -1mA ID = -2A, VGS = -4V* 1 1 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss ID = -2A, VGS = -2.5V* ID = -2A, VDS = -4V* VDS = -10V VGS = 0 f = 1MHz VGS = -4V, ID = -2A VDD -10V 1 Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test td(on) tr td(off) tf VDF trr 3 HAT1033T Main Characteristics 4 HAT1033T Package Dimensions Unit: mm 5 HAT1033T Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. 6 |
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